53012 tkim/70407gb ti im tc-00000796 no. a0842-1/7 http://onsemi.com semiconductor components industries, llc, 2013 august, 2013 tf252th n-channel jfet 20v, 140 to 350 a, 1.4ms, vtfp stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliabili ty. ordering number : ena0842a features ? high gain : g v =1.0db typ (v cc =2v, r l =2.2k , cin=5pf, v in =10mv, f=1khz) ? ultrasmall package facilitates miniaturization in end products ? best suited for use in electret condenser microphone for audio equipments and telephones ? excellent voltage characteristics ? excellent transient characteristics ? adoption of fbet process ? halogen free compliance speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit gate-to-drain voltage v gdo --20 v gate current i g 10 ma drain current i d 1ma allowable power dissipation p d 100 mw junction temperature tj 150 c storage temperature tstg --55 to +150 c package dimensions unit : mm (typ) 7031a-001 product & package information ? package : vtfp ? jeita, jedec : sc-106a ? minimum packing quantity : 8,000 pcs./reel packing type: tl marking electrical connection 1 : drain 2 : source 3 : gate vtfp 1 3 12 2 3 1.4 1.2 0.8 0.34 0.07 0.07 0.2 0.2 0.25 0.2 0.45 0.1 0 to 0.02 tl TF252TH-4-TL-H tf252th-5-tl-h 1 3 2 lot no. lot no. d rank
tf252th no. a0842-2/7 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max gate-to-drain breakdown voltage v (br)gdo i g =--100 a --20 v cutoff voltage v gs (off) v ds =2v, i d =1 a --0.1 --0.4 --1.0 v drain current i dss v ds =2v, v gs =0v 140* 350* a forward transfer admittance | yfs | v ds =2v, v gs =0v, f=1khz 0.8 1.4 ms input capacitance ciss v ds =2v, v gs =0v, f=1mhz 3.1 pf reverse transfer capacitance crss 0.95 pf [ta=25c, v cc =2.0v, r l =2.2k , cin=5pf, see speci ed test circuit.] voltage gain g v v in =10mv, f=1khz 1.0 db reduced voltage characteristic g vv v in =10mv, f=1khz, v cc =2.0v 1.5v --0.6 --2.0 db frequency characteristic gvf f=1khz to 110hz --1.0 db total harmonic distortion thd v in =30mv, f=1khz 0.65 % output noise voltage v no v in =0v, a curve --106 --102 db * : the tf252th is classi ed by i dss as follows : (unit : a) rank 4 5 i dss 140 to 240 210 to 350 test circuit ordering information device package shipping memo TF252TH-4-TL-H vtfp 8,000pcs./reel pb free and halogen free tf252th-5-tl-h vtfp 8,000pcs./reel osc 5pf + 33 f 2.2k v cc =2v v cc =1.5v v vtvm thd voltage gain frequency characteristic distortion reduced voltage characteristic
tf252th no. a0842-3/7 i d -- v ds i d -- v ds drain-to-source voltage, v ds -- v drain current, i d -- a drain-to-source voltage, v ds -- v drain current, i d -- a 0 0.5 2.0 1.0 1.5 300 200 250 100 50 150 0 it12440 v gs =0v --0.10v - -0.15v --0.05v --0.20v --0.30v - -0.25v it12441 01 5 234 350 300 200 250 100 50 150 0 v gs =0v --0.1v --0.2v --0.4v --0.3v v gs (off) -- i dss | y fs | -- i dss ciss -- v ds crss -- v ds zero-gate voltage drain current, i dss -- a forward transfer admittance, | y fs | -- ms zero-gate voltage drain current, i dss -- a cutoff voltage, v gs (off) -- v drain-to-source voltage, v ds -- v input capacitance, ciss -- pf drain-to-source voltage, v ds -- v i d -- v gs i d -- v gs gate-to-source voltage, v gs -- v drain current, i d -- a gate-to-source voltage, v gs -- v drain current, i d -- a --0.20 --0.25 --0.30 --0.35 --0.40 --0.55 --0.50 --0.45 --0.60 v ds =2v i d =1 a 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 100 150 200 250 300 400 350 it12444 100 150 200 250 300 400 350 it12445 v ds =2v v gs =0v f=1khz 10 7 5 3 2 1.0 1.0 10 23 57 7 523 it12446 v gs =0v f=1mhz it12447 1.0 7 5 3 3 2 1.0 10 23 57 7 523 v gs =0v f=1mhz 400 300 200 100 0 it12442 it12443 --0.6 --0.5 --0.4 --0.3 --0.2 --0.1 0 i dss =350 a 250 a 150 a 350 250 50 150 v ds =2v 400 300 200 100 0 --0.6 --0.5 --0.4 --0.3 --0.2 --0.1 0 ta=75 c 25 c --25 c 350 250 50 150 v ds =2v reverse transfer capacitance, crss -- pf
tf252th no. a0842-4/7 g v -- i dss g vv -- i dss zero-gate voltage drain current, i dss -- a voltage gain, g v -- db zero-gate voltage drain current, i dss -- a reduced voltage characteristic, g vv -- db it12448 --1.0 --0.8 --0.6 --0.4 --0.2 --0.9 --0.7 --0.5 --0.3 --0.4 --0.2 0 0.4 0.8 1.2 0.2 0.6 1.0 1.8 1.6 1.4 100 150 200 250 300 400 350 it12449 100 150 200 250 300 400 350 g v : v cc =2v v in =10mv f=1khz r l =2.2k cin=5pf i dss : v ds =2v g vv : v cc =2v 1.5v v in =10mv f=1khz r l =2.2k cin=5pf i dss : v ds =2v p d -- ta ambient temperature, ta -- c allowable power dissipation, p d -- mw thd -- v in input voltage, v in -- mv total harmonic distortion, thd -- % thd -- i dss zero-gate voltage drain current, i dss -- a total harmonic distortion, thd -- % 10 2 3 5 7 2 2 3 5 7 1.0 0.1 0 50 100 150 200 it12450 100 150 200 250 300 400 350 250 a 350 a i dss =150 a 0 it12451 0.2 0.4 0.6 1.0 0.8 1.2 1.4 thd : v cc =2v v in =30mv f=1khz r l =2.2k cin=5pf i dss : v ds =2v thd : v cc =2v f=1khz r l =2.2k cin=5pf i dss : v ds =2v 100 120 80 60 40 20 0 0 20 40 60 80 100 120 140 160 it12453
tf252th no. a0842-5/7 taping speci cation TF252TH-4-TL-H, tf252th-5-tl-h
tf252th no. a0842-6/7 outline drawing land pattern example TF252TH-4-TL-H, tf252th-5-tl-h mass (g) unit mm unit: mm 0.0012 * for reference 0.5 0.4 0.45 0.45 0.45 0.45 1.1
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